Comprehensive analysis report on the global market of silicon carbide MOSFETs
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一、Market share and product advantages of mainstream brands
Brand |
Market share in 2025 |
Core product advantages |
Technical characteristics |
STMicroelectronics (ST) |
32.60% |
The automotive-grade module is leading and adapted to the 800V platform |
CoolSiC technology, 70% lower switching loss than silicon-based IGBT, optimized avalanche robustness |
Onsemi |
23.60% |
Low voltage automotive applications are prominent, and the fourth-generation trenched structure MOSFET is prominent |
40% reduction in on-resistance, support for 750V power conversion modules, and 15% reduction in system cost |
Infineon |
16.50% |
Excellent performance in high-frequency switching scenarios |
1200V withstand voltage, fast switching (nanosecond level), FOM optimization of 70%, suitable for industrial motor drive |
Wolfspeed |
11.10% |
The whole industry chain is vertically integrated, the fourth generation of technology |
Simultaneously optimize on/switch losses, support 175°C junction temperature, and 75% yield on 8-inch wafers |
ROHM |
8% |
Outstanding high temperature stability |
The parasitic diode reverse recovery time is only 18ns, which is suitable for photovoltaic 1500V systems |
二、Analysis of target market and customer groups
Applications |
Customer groups |
Demand characteristics |
Represent product solutions |
New energy vehicles |
Tesla, |
800V platform compatible, |
ST SCT040H65G3AG (650V/40A) for OBC, system cost reduced by $200/vehicle |
Photovoltaic/energy storage |
Sungrow Huawei |
1500V system support, conversion efficiency > 99%, reducing LCOE |
Wolfspeed C3M0075120K (1200V/72A) string inverter reduces inductance volume by 30% |
Industrial power supply |
Delta Emerson |
High frequency (100kHz+), avalanche impact resistant, 175°C operation |
Onsemi NVHL080N120SC1 (1200V/80A) servo drive reduces losses by 20% |
Supercharged piles |
Telephone Star Charging |
350kW power output, V2G bidirectional function |
Infineon FF6MR12W2M1_B11 (1200V/120A) module with 96% charging efficiency |
三、Main product specifications and market applications
Voltage level |
Representative model |
Key parameters |
Core application areas |
650V |
BASiC_B3M040065H |
67A continuous current, 40mΩ on-resistance |
Switching power supply, motor drive, welding machine, suitable for 300-1000Vdc charging module |
1200V |
Infineon CoolSiC™ IMZA120R040M1H |
1200V withstand voltage, 175°C junction temperature |
New energy vehicle inverter (OBC/DCDC), photovoltaic inverter (1500V system), efficiency >99% |
Integrated modules |
ST ACEPACK™ DRIVE 2 |
Full-bridge topology with integrated NTC sensor |
The main drive system of electric vehicles has a 30% increase in power density and is adapted to the 800V fast charging architecture |
四、New Growth Trend Forecast (2025-2030)
1、Market size expansion
-
The global SiC MOSFET market size will increase from US$59.6 million in 2025 to US$178 million in 2031 at a CAGR of 17.2%;
- The penetration rate of new energy vehicles will exceed 35% in 2025, driving the SiC value of bicycles to US$1,500-2,000.
2、Direction of technology iteration
-
Mass production of 8-inch wafers: It will become mainstream in 2025, and the proportion of substrate costs will drop from 47% to less than 30%;
-
Fourth-generation devices: Wolfspeed/onsemi introduces trench grid structure with 15% FOM optimization.
3、Application scenario extension
-
AI server power supply: 48V architecture demand drives 100kHz+ high-frequency SiC applications, with a CAGR of 11.3% after 2025;
- Supercharging network: The penetration rate of SiC in 350kW fast charging piles will increase from 30% in 2024 to 65% in 2027.
4、Accelerated localization
- The proportion of production capacity of Chinese manufacturers will increase from 12% in 2025 to 30% in 2030, and the cost of B3M series will be 20% lower than that of the international market.
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