ChipNobo 4500V 1500A IGBT Module Data comparison
ChipNobo 4500V 1500A IGBT Module Data comparison
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Key Parameter Information
FZ1500R45KL3_B5
CIM1500T450PMDA
1
Collector-emitter voltage Vces
4500V
4500V
2
Collector current IC
1500A
1500A
3
Collector peak current Icmax
3000A
3000A
4
Gate-emitter voltage VGES
±20V
±20V
5
Minimum on-time Tonmin
<10us
<10us
6
Collector-emitter saturation voltage VCEsat_25
2.7-3.05V
2.55-2.95V
7
Short-circuit current ISC
6900A
6800A
8
Package thermal resistance Rthjc_IGBT
<7.4K/kW
<8K/kW
9
Package thermal resistance Rthjc_DIODE
17K/kW
<11.7K/kW
10
Package thermal resistance Rthch_IGBT
9K/kW(type)
7K/kW(type)
11
Package thermal resistance Rthch_DIODE
14K/kW
8K/kW(type)
12
Operating junction temperature_IGBT
‘-50-125℃
‘-40-150℃
13
Operating junction temperature_DIODE
‘-50-125℃
‘-40-150℃
14
Isolation voltage VISO
10.4KV
10.2KV
15
Turn-on threshold VGETH
5.4-6.6V
5.8V-7V
16
Input capacitance CIES
280nF
445nF(type)
17
Reverse transfer capacitance CRES
4.7nF
0.27nF
18
Fall time Tf
1020ns
740ns
19
Rise time Tr
210ns
360ns
20
Collector turn-off current ICES
<5mA
<1mA
21
Gate resistance RGint
0.75Ω
1.5Ω
22
Reverse recovery charge Qr
1300uC
1130uC
23
Diode reverse recovery loss EREC
2000mJ
1495mJ
24
Diode reverse recovery current Irr
1600A
1295A
25
Turn-on energy loss Eon
5200mJ
5415mJ
26
Turn-on delay Td_on
1075ns
910ns
27
Turn-off delay Td_off
1700ns
3015ns
28
Gate charge Qg
39.5uC
25.6uC
29
Turn-off energy loss Eoff
6050mJ
2965mJ
30
Lead resistance RCC+EE
0.12mΩ
0.1mΩ
31
Module stray inductance LsCE
18nH
9nH
欢迎工程师选型参考。
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